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EA0911 A8512 0PFTN TE943SM CED75A3 DTA114T 10001 PCF8578
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  dimensions in inches and (millimeters) version: a06 heraf1001g - heraf1008g isolated 10.0 amps. glass passivated high efficient rectifiers ito-220ac .071(1.8) max .161(4.1) .146(3.7) .118(3.00) .124(3.16) .185(4.7) .173(4.4) .272(6.9) .248(6.3) .063(1.6) max .100(2.55) .543(13.8) .512(13.2) .100(2.55) .110(2.8) .098(2.5) .606(15.5) .583(14.8) .112(2.85) .100(2.55) .406(10.3) .390(9.90) .134(3.4)dia .113(3.0)dia .043(1.1) .020(0.5) .035(0.9) .055(1.4) .030(0.76) .020(0.50) 2 pin 1 pin 2 case positive case features  glass passivated chip junction.  high efficiency, low vf  high current capability  high reliability  high surge current capability  for use in low voltage, high frequency inventor, free wheeling, and polarity protection application. mechanical data  cases: ito-220ac molded plastic  epoxy: ul 94v0 rate flame retardant  terminals: pure tin plated, lead free solderable per mil-std-202, method 208 guaranteed  polarity: as marked  high temperature soldering guaranteed: 260 o c/10 seconds 0.25?,(6.35mm) from case.  mounting torque : 5 in ? 1bs. max.  weight: 2.24 grams maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol heraf 1001g heraf 1002g heraf 1003g heraf 1004g heraf 1005g heraf 1006g heraf 1007g heraf 1008g units maximum recurrent peak reverse voltage v rrm 50 100 200 300 400 600 800 1000 v maximum rms voltage v rms 35 70 140 210 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 300 400 600 800 1000 v maximum average forward rectified current @t c =100 o c i (av) 10 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 150 a maximum instantaneous forward voltage @10.0a v f 1.0 1.3 1.7 v maximum dc reverse current @t a =25 o c at rated dc blocking voltage @ t a =125 o c i r 10 400 ua ua maximum reverse recovery time ( note 1 ) trr 50 80 ns typical junction capacitance ( note 2 ) cj 80 60 pf typical thermal resistance (note 3) r jc 2.0 o c/w operating temperature range t j -65 to +150 o c storage temperature range t stg -65 to +150 o c notes: 1. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a 2. measured at 1 mhz and applied reverse voltage of 4.0v d. c. 3. mounted on heatsink size of 2 in x 3 in x 0.25 in al-plate.
fig.6 - revers e recove r y tim e characteristi c an d tes t circui t diagram 50 noninductive non inductive oscilloscope (not e 1) pulse gener a t or (not e 2) dut (+) 50vdc (approx) (-) notes : 1 . ris e t ime=7n s max . inpu t impedance= 1 megoh m 22pf 2 . ris e t ime=10n s max . sours e impedance= 5 0 ohms (-) (+) 10 noninductive -1.0a -0.25a 0 +0.5a trr 1cm set time base for 5/ 10ns/ cm ratings and characteristic curves (heraf1001g thru heraf1008g) fig.1- maximum forward current derating curve average for ward current . (a) 0 50 100 150 0 4 6 8 10 12 case temperature. ( c) o fig.5- typical forward characteristics instantaneous for ward current . (a) 1.6 1.8 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.03 0.3 1.0 3.0 10 30 100 0.1 forward voltage. (v) h er a f1001g ~h er a f1004g heraf1005g heraf1006g~heraf1008g fig.3- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 2 5 10 20 100 50 30 60 90 120 150 number of cycles at 60hz tj=25 c 0 8.3ms single half sine wave jedec method 0 fig.2- typical reverse characteristics instantaneous reverse current .( a) 20 40 60 80 100 120 140 0.1 1 10 100 1000 percent of rated peak reverse voltage. (%) tj=25 c 0 tj=125 c 0 0 version: a06 fig.4- typical junction capacitance junction cap acitance.(pf) 15 2 10 20 50 100 200 500 30 60 90 0 120 150 reverse voltage. (v) 1000 h e r a f 1006g ~h e r a f1008g h e r a f1001g ~h e r a f1005g


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